Light emitting diode package and light emitting diode module

ABSTRACT

A light emitting diode package including a housing, first and second light emitting diode chips disposed in the housing, and a wavelength conversion part including a phosphor to absorb light emitted from the first light emitting diode chip and emit light having a different wavelength than that emitted from the first light emitting diode chip, in which light emitted from the first light emitting diode chip has a shorter wavelength than light emitted from the second light emitting diode chip, the wavelength conversion part is configured to emit red light having a peak wavelength of 580 nm to 700 nm and exhibiting at least three peaks at a wavelength of 600 nm to 660 nm, and the light emitting diode package is configured to emit white light by mixing light emitted from the first light emitting diode chip, the second light emitting diode chip, and the wavelength conversion part.

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent document is a Continuation of U.S. patent application Ser.No. 15/708,792, filed on Sep. 19, 2017, which claims priority to and thebenefit of Korean Patent Application No. 10-2016-0120765, filed on Sep.21, 2016, each of which is incorporated by reference for all purposes asif fully set forth herein.

BACKGROUND Field

Exemplary embodiments relate to a light emitting diode package and alight emitting diode module, and more particularly, to a light emittingdiode package that improves luminous efficacy of a light emitting diodechip, and a light emitting diode module.

Discussion of the Background

A light emitting diode (LED) refers to a compound semiconductor devicethat has a p-n junction of semiconductors and emits light throughrecombination of a small number of carriers (electrons and holes). Alight emitting diode generally has low power consumption, long lifespan,and a small size.

Generally, a light emitting diode is provided as a chip, and a lightemitting diode package is provided to package a light emitting diodechip. The light emitting diode package may include phosphors aswavelength conversion elements to realize white light. Specifically, thephosphors are disposed on the light emitting diode chip, such that whitelight can be realized through mixing one or more primary light emittedfrom light emitting diode chip and secondary light subjected towavelength conversion through the phosphors.

A conventional light emitting diode package may realize white light byusing phosphors (yellow phosphors), which may emit yellow white throughexcitation of light received from a blue light emitting diode chip.However, the light emitting diode package using the yellow phosphorsalone emits light lacking a red color component, and thus, hascharacteristics of low color index and high color temperature. In orderto solve such problems, some light emitting diode packages may employ amixture of phosphors emitting green light (hereinafter, green phosphors)or phosphors emitting yellow light (hereinafter, yellow phosphors), andphosphors emitting red light (hereinafter, red phosphors) in awavelength conversion part rather than using one type of yellowphosphor.

However, when a structure includes phosphors having different peakwavelengths mixed in the wavelength conversion part, luminous efficacyof the light emitting diode package may be significantly deteriorated.

Therefore, there is a need for fundamental improvement of energyconversion efficiency by phosphors for a light emitting diode package.

SUMMARY

Exemplary embodiments provide a light emitting diode package thatimproves wavelength conversion efficiency by preventing energy losscaused by wavelength conversion while realizing white light, and a lightemitting diode module including the same.

Exemplary embodiments also provide a light emitting diode package thatbroadens a color gamut, and a light emitting diode module including thesame.

Exemplary embodiments further provide a white light emitting diodepackage that prevents light loss arising from a high density ofphosphors, and a white light emitting diode module including the same.

Exemplary embodiments also provide a light emitting diode package thatimproves resolution and light output to reduce power consumption, and alight emitting diode module including the same.

In accordance with one aspect of the present disclosure, a lightemitting diode package includes a housing, a first light emitting diodechip and a second light emitting diode chip disposed in the housing, anda wavelength conversion part including a phosphor absorbing lightemitted from the first light emitting diode chip and emitting lighthaving a different wavelength than the light emitted from the firstlight emitting diode chip, in which the light emitted from the firstlight emitting diode chip emits light has a shorter wavelength thanlight emitted from the second light emitting diode chip, and thephosphor has a fluorescence intensity of 10 or less at a peak wavelengthof light emitted from the second light emitting diode chip, withreference to a maximum fluorescence intensity of 100 at a wavelength of425 nm to 475 nm on an excitation spectrum of the second light emittingdiode chip.

The first light emitting diode chip and the second light emitting diodechip may emit blue light and green light, respectively.

The first light emitting diode chip may emit blue light, the secondlight emitting diode chip may emit green light, and the wavelengthconversion part may emit red light.

The blue light may have a peak wavelength of 440 nm to 460 nm and thegreen light may have a peak wavelength of 515 nm to 530 nm.

The phosphor may include at least one of nitride phosphor, sulfidephosphor, fluoride phosphor, quantum dot phosphor, and combinationsthereof.

The phosphor may include fluorine-based phosphor and the phosphor mayhave a fluorescence intensity of 5 or less at the peak wavelength of thelight emitted from the second light emitting diode chip, with referenceto the maximum fluorescence intensity of 100 on the excitation spectrumthereof.

The phosphor may be a quantum dot phosphor and comprises at least onecompound semiconductor of In, Zn, S, Cd, Se, Pb, and combinationsthereof.

Red light emitted from the wavelength conversion part may exhibit atleast three peaks at a wavelength of 600 nm to 660 nm.

The light emitting diode package may emit white light by mixing lightemitted from the first light emitting diode chip, the second lightemitting diode chip, and the wavelength conversion part.

The light emitting diode package may have a color gamut of 95% or morewith reference to an NTSC (National Television System Committee)

In accordance with another aspect of the present disclosure, a lightemitting diode package includes a housing having a first cavity and asecond cavity a first light emitting diode chip disposed in the firstcavity, a second light emitting diode chip disposed in the secondcavity, and a wavelength conversion part disposed in the first cavityand converting wavelengths of light emitted from the first lightemitting diode chip, in which light emitted from the first lightemitting diode chip emits light has a shorter wavelength than lightemitted from the second light emitting diode chip, and the light emittedfrom the second light emitting diode chip is blocked from entering thewavelength conversion part.

The wavelength conversion part may further include a first transparentresin including phosphors dispersed therein, and the second cavity mayinclude a second transparent resin not including phosphors.

In accordance with a further aspect of the present disclosure, a lightemitting diode module includes a substrate and the light emitting diodepackage mounted on the substrate.

In accordance with an aspect of the present disclosure, a light emittingdiode package includes a housing, a first light emitting diode chip anda second light emitting diode chip disposed in the housing and awavelength conversion part including a phosphor configured to absorblight emitted from the first light emitting diode chip and emit lighthaving a different wavelength than that emitted from the first lightemitting diode chip, in which light emitted from the first lightemitting diode chip has a shorter wavelength than light emitted from thesecond light emitting diode chip, the wavelength conversion part isconfigured to emit red light having a peak wavelength of 580 nm to 700nm and exhibiting at least three peaks at a wavelength of 600 nm to 660nm, and the light emitting diode package is configured to emit whitelight by mixing light emitted from the first light emitting diode chip,the second light emitting diode chip, and the wavelength conversionpart.

In accordance with another aspect of the present disclosure, a lightemitting diode module includes a housing, a first light emitting diodechip and a second light emitting diode chip disposed in the housing, anda wavelength conversion part including a phosphor configured to absorblight emitted from the first light emitting diode chip and emit lighthaving a different wavelength than that emitted from the first lightemitting diode chip, in which light emitted from the first lightemitting diode chip has a shorter wavelength than light emitted from thesecond light emitting diode chip, the wavelength conversion part isconfigured to emit red light having a peak wavelength of 580 nm to 700nm and exhibiting at least three peaks at a wavelength of 600 nm to 660nm, and the light emitting diode package is configured to emit whitelight by mixing light emitted from the first light emitting diode chip,the second light emitting diode chip, and the wavelength conversionpart.

In accordance to another aspect of the present disclosure, a lightemitting diode package includes a housing including a first cavity and asecond cavity, a first light emitting diode chip disposed in the firstcavity, a second light emitting diode chip disposed in the secondcavity, and a wavelength conversion part disposed in the first cavityand configured to convert wavelengths of light emitted from the firstlight emitting diode chip, in which light emitted from the first lightemitting diode chip has a shorter wavelength than light emitted from thesecond light emitting diode chip, light emitted from the second lightemitting diode chip is configured to be blocked from entering thewavelength conversion part, and the light emitting diode package isconfigured to emit white light by mixing light emitted from the firstlight emitting diode chip, the second light emitting diode chip, and thewavelength conversion part

According to exemplary embodiments, the light emitting diode packagescan improve wavelength conversion efficiency through reduction of energyinterference between phosphors.

In addition, according to the exemplary embodiments, the light emittingdiode packages emit white light using light emitting diode chipsconfigured to emit light having different wavelengths and thus canreduce the density of phosphors within the wavelength conversion part,thereby improving the color gamut while reducing light loss throughreduction in non-luminous absorption by the phosphors.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the disclosed technology, and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the disclosed technology, and together with thedescription serve to describe the principles of the disclosedtechnology.

FIG. 1 is a graph depicting luminous spectrum distributions of a greenphosphor and a red phosphor and a luminous spectrum distribution of awhite LED.

FIG. 2 is a graph depicting excitation spectrum distributions andluminous spectrum distributions of a green phosphor and a red phosphor.

FIG. 3 and FIG. 4 are perspective views of a light emitting diodepackage according to exemplary embodiments.

FIG. 5 and FIG. 6 are perspective views of a light emitting diode moduleaccording to exemplary embodiments.

FIG. 7 is a graph depicting an excitation spectrum of a red phosphoremitting red light according to an exemplary embodiment.

FIG. 8 is a graph depicting an excitation spectrum of quantum dotsemitting red light according to an exemplary embodiment.

FIG. 9 is a luminous spectrum distribution of a light emitting diodepackage according to an exemplary embodiment.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Exemplary embodiments of the present disclosure will be described inmore detail with reference to the accompanying drawings. However, itshould be understood that the present disclosure is not limited to thefollowing embodiments and may be embodied in different ways. Rather, thefollowing embodiments are given by way of illustration only to providethorough understanding of the present disclosure to those skilled in theart.

It should be understood that, when a layer is referred to as being “on”another layer or substrate, it can be directly formed on the other layeror substrate, or intervening layer(s) may also be present. In addition,spatially relative terms, such as “above,” “upper (portion),” “uppersurface,” and the like may be understood as meaning “below,” “lower(portion),” “lower surface,” and the like according to a referenceorientation. In other words, spatial orientations are to be construed asindicating relative orientations instead of absolute orientations.

Like elements are denoted by like reference numerals throughout thespecification and drawings. In addition, it should be understood thatthe terms “comprise,” “include,” and/or “have(has)” as used herein,specify the presence of stated features, numerals, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, numerals, steps, operations,elements, and/or components.

Hereinafter, exemplary embodiments of the present disclosure will bedescribed in detail with reference to the accompanying drawings.

FIG. 1 is a graph depicting luminous spectrum distributions of a greenphosphor and a red phosphor and a luminous spectrum distribution of awhite LED. FIG. 2 is a graph depicting excitation spectrum distributionsand luminous spectrum distributions of a green phosphor and a redphosphor.

Referring to FIG. 1, a peak wavelength of green light is placed near 540nm and a peak wavelength of red light is placed near 650 nm. In order torealize white light, a conventional white light emitting diode packageincludes a blue light emitting diode chip and a wavelength conversionpart, which may include green and red phosphors that are mixed togetherand emit green light and red light through excitation of light receivedfrom the blue light emitting diode chip. When the green phosphors andthe red phosphors are mixed, some fractions of green light emitted fromthe green phosphors may excite the red phosphors.

Accordingly, in the white light emitting diode package, light emittedfrom the blue light emitting diode chip is absorbed by the greenphosphors and the red phosphors, which in turn emit light depending uponthe wavelengths thereof, and some fractions of light emitted from thegreen phosphors are absorbed by the red phosphors, which in turn emitred light. Accordingly, energy conversion efficiency of the phosphorsmay be reduced.

Referring to FIG. 2, the excitation spectrum distribution of the redphosphor substantially overlaps the excitation spectrum distribution ofthe green phosphor. More particularly, the red phosphor absorbs lightemitted from the blue light emitting diode chip and light emitted fromthe green phosphor, which may cause energy interference between thegreen phosphor and the red phosphor. In addition, since phosphorsgenerally have a broad absorption wavelength band, green light emittedfrom the green phosphor may be absorbed again by the green phosphor.

Accordingly, the overall energy conversion efficiency is reduced due toconversion efficiency of blue light by the green phosphors, conversionefficiency of blue light by the red phosphors, absorption of green lightby the green phosphors, and conversion efficiency of green light by thered phosphors. Moreover, since two or more types of phosphors are mixedin one wavelength conversion part, the wavelength conversion part mayhave a high density of the phosphors, which may cause light loss throughnon-luminous absorption by the phosphors.

FIG. 3 is a schematic perspective view of a light emitting diode packageaccording to an exemplary embodiment.

Referring to FIG. 3, a light emitting diode package 1000 may include ahousing 1, a first light emitting diode chip 131, a second lightemitting diode chip 132, and a wavelength conversion part 140 includingphosphors 150.

The housing 1 may include a cavity to which the first light emittingdiode chip 131 and the second light emitting diode chip 132 arereceived. The housing 1 may be formed of various materials includingmetal, ceramic, or general plastic (polymer) materials, for example,acrylonitrile butadiene styrene (ABS), liquid crystalline polymers(LCP), polyamides (PA), polyphenylene sulfide (IPS), thermoplasticelastomers (TPE), epoxy molding compounds (EMC), or silicone moldingcompounds (SMC), without being limited thereto.

The first light emitting diode chip 131 and the second light emittingdiode chip 132 may be received in the cavity of the housing 1, and mayemit blue light and green light, respectively. For example, the firstlight emitting diode chip 131 may emit light having a shorter wavelengththan the second light emitting diode chip 132. For the light emittingdiode package 1000 to realize white light using one wavelengthconversion part 140, the first light emitting diode chip 131 may emitblue light having a peak wavelength of 440 nm to 460 nm and the secondlight emitting diode chip 132 may emit green light having a peakwavelength of 515 nm to 530 nm.

The first light emitting diode chip 131 and the second light emittingdiode chip 132 may include, for example, gallium nitride semiconductors.The light emitting diode package 1000 shown in FIG. 3 is illustrated asincluding two light emitting diode chips 131 and 132 received in thecavity. However, the inventive concepts are not limited thereto, and thenumber and arrangement of first and second light emitting diode chips131 and 132 may be varied.

The wavelength conversion part 140 may include phosphors 151 thatconvert wavelengths of light emitted from the first light emitting diodechip 131. The phosphors 151 may have a fluorescence intensity of 10 orless at a peak wavelength of light emitted from the second lightemitting diode chip 132, with reference to a maximum fluorescenceintensity of 100 of the excitation spectrum of light emitted from thesecond light emitting diode chip 132.

Specifically, the wavelength conversion part 140 includes the phosphors151, which may absorb blue light emitted from the first light emittingdiode chip 131 and emit red light having a peak wavelength of 580 nm to700 nm. The phosphors 151 may include at least one of nitride phosphors,sulfide phosphors, fluoride phosphors, quantum dot phosphors, andcombinations thereof, without being limited thereto. For example, thephosphors 151 may include fluorine-based phosphors.

Quantum dot phosphors (QDs: quantum dot) may be a compound semiconductorincluding particles having a size of 2 nm to 50 nm, also referred to asnanocrystals. The quantum dot phosphors may include at least one ofGroup II to XVI ions, and may include binary, ternary, and quaternarymaterials. That is, the quantum dot phosphors may include materialscontaining two, three, and four different ions. For example, the quantumdot phosphors may include at least one of In, Zn, S, Cd, Se, and Pb. Forexample, the quantum dot phosphors may include at least one of GroupII-VI or III-V compound semiconductors including CdS, CdSe, CdTe, ZnS,ZnSe, ZnTe, HgS, HgSe, HgTe, GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP,and InAs, mixtures thereof, and composites thereof, in which thecomposite may include at least one of CdSeS, CdSeTe, CdSTe, ZnSeS,ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS,CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe,CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaNP, GaNAs,GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs,GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs, InAlPAs, SnS, CuInS, CuZnS,CuSnS, CuSnSe, CuSnGaS, and CuSnGaSe, without being limited thereto.

As such, the light emitting diode package 1000 according to an exemplaryembodiment may emit white light through mixing light emitted from thefirst light emitting diode chip 131, which emits blue light having apeak wavelength of 440 nm to 460 nm, the second light emitting diodechip 132, which emits green light having a peak wavelength of 515 nm to530 nm, and the wavelength conversion part 140, which emits red lighthaving a peak wavelength of 580 nm to 700 nm and includes one type ofphosphors 151 to prevent interference between different types ofphosphors. In this manner, energy conversion efficiency of light emittedfrom the light emitting diode chips may be improved.

On the excitation spectrum, the fluorescence intensity at a wavelengthof 630 nm and the degree of light absorption by the phosphors at eachwavelength may be exhibited upon irradiating the phosphors with light,while changing the wavelengths of light under the same energy condition.That is, the phosphors 151 emitting red light through absorption of bluelight emitted from the first light emitting diode chip 131 aresubstantially prevented from absorbing green light emitted from thesecond light emitting diode chip 132, thereby reducing light lossthrough reduction in non-luminous absorption by the phosphors 151.

FIG. 4 is a schematic perspective view of a light emitting diode packageaccording to an exemplary embodiment.

Referring to FIG. 4, a light emitting diode package 2000 includes ahousing 10 having a first cavity 11 and a second cavity 12, a firstlight emitting diode chip 131, a second light emitting diode chip 132,and a wavelength conversion part 141.

The housing 10, the first light emitting diode chip 131, and the secondlight emitting diode chip 132 of the light emitting diode package 2000may be substantially similar to those in the light emitting diodepackage 1000 shown in FIG. 3. The light emitting diode package 2000 ofFIG. 4, however, is distinguished from the light emitting diode package1000 of FIG. 3, in that the housing 10 has regions divided from eachother by the first cavity 11 and the second cavity 12, such that thefirst light emitting diode chip 131 and the second light emitting diodechip 132 may be received in the first cavity 11 and the second cavity12, respectively.

Specifically, the housing 10 may be divided into the first cavity 11 andthe second cavity 12, such that light emitted from the second lightemitting diode chip 132 is blocked from entering the wavelengthconversion part 141. Thus, when the wavelength conversion part 141including phosphors 152 is disposed in the first cavity 11 or the secondcavity 12, the light emitting diode package 2000 may essentially preventnon-luminous absorption by the phosphors 152. The structure of the lightemitting diode package 2000 will be described in more detail.

The wavelength conversion part 141 may include the phosphors 152disposed in the first cavity 11 to convert wavelengths of light emittedfrom the first light emitting diode chip 131. Specifically, thewavelength conversion part 141 includes the phosphors 152, which canabsorb blue light emitted from the first light emitting diode chip 131to emit red light having a peak wavelength of 580 nm to 700 nm. Thephosphors 152 may include at least one of nitride phosphors, sulfidephosphors, fluoride phosphors, quantum dot phosphors, and combinationsthereof. The phosphors 152 in the light emitting diode package 2000 maybe the same or different from the phosphors 151 in the light emittingdiode package 1000 described with reference to FIG. 3.

In addition, the wavelength conversion part 141 may further include atransparent resin, in which the phosphors 152 are dispersed. Thetransparent resin may include at least one of silicone, epoxy,poly(methyl methacrylate) (PMMA), polyethylene (PE), and polystyrene(PS) resins, without being limited thereto.

The second cavity 12 may or may not include a wavelength conversion partincluding phosphors, depending upon a color of light to be emitted fromthe light emitting diode package 2000. For example, in the lightemitting diode package 2000 emitting white light, the first lightemitting diode chip 131 emitting blue light and the wavelengthconversion part 141 including the phosphors 152 emitting red lightthrough absorption and wavelength conversion of the blue light may bedisposed in the first cavity 11. Further, the second light emittingdiode chip 132 emitting green light may be disposed in the second cavity12 of the light emitting diode package 2000, on which a transparentresin containing no phosphors is disposed to form a molding portion 142.

More particularly, in the light emitting diode package 2000 of FIG. 4,the phosphors 152 emitting red light through absorption and excitationof blue light are disposed in the first cavity 11, and the transparentresin not containing the phosphors 152 is disposed in the second cavity12, in which the second light emitting diode chip 132 emitting greenlight is disposed. In this manner, the light emitting diode package 2000according to an exemplary embodiment may prevent interference betweendifferent kinds of phosphors, which may occur in a conventionalstructure using a mixture of red light phosphors and green lightphosphors, and may prevent energy loss from reabsorption of lightemitted from the green light phosphors into the red light phosphors.

FIG. 5 and FIG. 6 are perspective views of a light emitting diode moduleaccording to an exemplary embodiment.

Referring to FIG. 5 and FIG. 6, the light emitting diode moduleaccording to an exemplary embodiment includes a substrate 210 and thelight emitting diode packages 1000 or 2000 according to the exemplaryembodiments mounted on the substrate 210.

The substrate 210 is not particularly limited, and may be formed ofvarious materials in consideration of dissipation of the light emittingdiode packages 1000 or 2000 and electrical connection thereof. Forexample, a printed circuit board may be used as the substrate 210.

For example, the light emitting diode module according to the presentexemplary embodiment may emit white light by mixing light emitted fromthe first light emitting diode chip 131 emitting blue light having apeak wavelength of 440 nm to 460 nm, the second light emitting diodechip 132 emitting green light having a peak wavelength of 515 nm to 530nm, and the wavelength conversion part 140 emitting red light having apeak wavelength of 580 nm to 700 nm.

It should be noted that although realization of white light is mainlyillustrated in the above exemplary embodiments, the inventive conceptsare not limited white light and may be applied to various light emittingdiode packages or light emitting diode modules, which may emit mixedlight using at least two types of phosphors having different peakwavelengths.

Experimental Example 1

Example 1 is the light emitting diode package 1000 manufacturedaccording to an exemplary embodiment. Referring back to FIG. 3, thelight emitting diode package 1000 includes a housing 1, which receives ablue light emitting diode chip emitting blue light having a peakwavelength of about 450 nm and a green light emitting diode chipemitting green light having a peak wavelength of about 525 nm therein,and a wavelength conversion part 140 disposed in the cavity andincluding phosphors that emit red light through absorption andexcitation of blue light. In addition, a portion of the wavelengthconversion part 140 molding the cavity may include phosphors, such asYAG, LuAG, ortho-silicate, thiogallate, oxynitride, or Beta-SiAlON-basedphosphors.

Referring to FIG. 7 depicting an excitation spectrum of red lightphosphors, and FIG. 8 depicting an excitation spectrum of red lightquantum dot phosphors, the phosphors 151 have a fluorescence intensityof 10 or less at a peak wavelength of green light (e.g., 515 nm to 530nm) emitted from the green light emitting diode chip, with reference toa maximum fluorescence intensity of 100 (e.g., at around 470 nm) of theexcitation spectrum of green light emitted from the green light emittingdiode chip.

In addition, for the light emitting diode package according to thepresent exemplary embodiment, the color coordinates (CIE), light output(IV), and color gamut with reference to the NTSC (National TelevisionSystem Committee) were measured, before and after formation of thewavelength conversion part including the phosphors, and measurementresults are shown in Table 1 below.

As a comparative example, a conventional light emitting diode packagewas manufactured. The conventional light emitting diode package includesa blue light emitting diode chip and a wavelength conversion partincluding both green light phosphors and red light phosphors. For theconventional light emitting diode package, the color coordinates (CIE),light output (IV), and color gamut with reference to the NTSC (NationalTelevision System Committee) were measured, before and after formationof the wavelength conversion part including the phosphors. Measurementresults are shown in Table 1 and a graph of the spectrum distributionthereof is shown in FIG. 9.

TABLE 1 Before formation After formation of wavelength of wavelengthChip conversion part conversion part PKG Blue Green Phosphors CIE x CIEy IV ΔIV (%) CIE x CIE y IV ΔIV (%) NTSC Comparative Blue Green + 0.2580.236 24.7 100.0% 0.269 0.282 1.84 100.0% 93.2 Example Red Example BlueGreen Red 0.258 0.235 32.6 131.8% 0.271 0.288 2.53 137.4% 100.2

As shown in Table 1, it can be seen that the light emitting diodepackage according to an exemplary embodiment emits white light indesired color coordinates and has greater light output than theconventional light emitting diode package by 30% or more. Accordingly,the light emitting diode package according to the exemplary embodimentemits brighter light than the conventional light emitting diode packageunder the same power conditions and improves economic feasibility anddurability through reduction in power consumption.

In addition, as measured with reference to the NTSC (National TelevisionSystem Committee), the conventional light emitting diode package had acolor gamut of 93.2%, whereas the light emitting diode package accordingto the exemplary embodiment had a color gamut of 100.2%, therebyachieving significant improvement in resolution.

Although certain exemplary embodiments have been described herein, itshould be understood by those skilled in the art that these embodimentsare given by way of illustration only, and that various modifications,variations, and alterations can be made without departing from thespirit and scope of the invention. Therefore, the scope of the inventionshould be limited only by the accompanying claims and equivalentsthereof

What is claimed is:
 1. A light emitting diode package comprising: ahousing; a first light emitting diode chip and a second light emittingdiode chip disposed in the housing; and a wavelength conversion partcomprising a phosphor configured to absorb light emitted from the firstlight emitting diode chip and emit light having a different wavelengththan that emitted from the first light emitting diode chip, wherein:light emitted from the first light emitting diode chip has a shorterwavelength than light emitted from the second light emitting diode chip;the wavelength conversion part is configured to emit red light having apeak wavelength of 580 nm to 700 nm and exhibiting at least three peaksat a wavelength of 600 nm to 660 nm; and the light emitting diodepackage is configured to emit white light by mixing light emitted fromthe first light emitting diode chip, the second light emitting diodechip, and the wavelength conversion part.
 2. The light emitting diodepackage according to claim 1, wherein the first light emitting diodechip and the second light emitting diode chip are configured to emitblue light and green light, respectively.
 3. The light emitting diodepackage according to claim 1, wherein the phosphor comprises at leastone of nitride phosphor, sulfide phosphor, fluoride phosphor, quantumdot phosphor, and combinations thereof.
 4. The light emitting diodepackage according to claim 1, wherein the phosphor has a fluorescenceintensity of 10 or less at a peak wavelength of light emitted from thesecond light emitting diode chip, with reference to a maximumfluorescence intensity of 100 at a wavelength of 425 nm to 475 nm on anexcitation spectrum of the second light emitting diode chip.
 5. Thelight emitting diode package according to claim 1, wherein the phosphorcomprises fluorine-based phosphor, and has a fluorescence intensity of 5or less at the peak wavelength of light emitted from the second lightemitting diode chip, with reference to the maximum fluorescenceintensity of 100 on the excitation spectrum thereof.
 6. The lightemitting diode package according to claim 1, wherein the phosphor is aquantum dot phosphor and comprises at least one compound semiconductorof In, Zn, S, Cd, Se, Pb, and combinations thereof.
 7. The lightemitting diode package according to claim 1, wherein the light emittingdiode package has a color gamut of 95% or more with reference to an NTSC(National Television System Committee).
 8. A light emitting diode modulecomprising: a substrate; a first light emitting diode chip and a secondlight emitting diode chip disposed on the substrate; and a wavelengthconversion part comprising a phosphor configured to absorb light emittedfrom the first light emitting diode chip and emit light having adifferent wavelength than that emitted from the first light emittingdiode chip, wherein: light emitted from the first light emitting diodechip has a shorter wavelength than light emitted from the second lightemitting diode chip; the wavelength conversion part is configured toemit red light having a peak wavelength of 580 nm to 700 nm andexhibiting at least three peaks at a wavelength of 600 nm to 660 nm; andthe light emitting diode module is configured to emit white light bymixing light emitted from the first light emitting diode chip, thesecond light emitting diode chip, and the wavelength conversion part. 9.The light emitting diode module according to claim 8, wherein the firstlight emitting diode chip and the second light emitting diode chip areconfigured to emit blue light and green light, respectively.
 10. Thelight emitting diode module according to claim 8, wherein the phosphorcomprises at least one of nitride phosphor, sulfide phosphor, fluoridephosphor, quantum dot phosphor, and combinations thereof.
 11. The lightemitting diode module according to claim 8, wherein the phosphor has afluorescence intensity of 10 or less at a peak wavelength of lightemitted from the second light emitting diode chip, with reference to amaximum fluorescence intensity of 100 at a wavelength of 425 nm to 475nm on an excitation spectrum of the second light emitting diode chip.12. The light emitting diode module according to claim 8, wherein thephosphor comprises fluorine-based phosphor, and has a fluorescenceintensity of 5 or less at the peak wavelength of the light emitted fromthe second light emitting diode chip, with reference to the maximumfluorescence intensity of 100 on the excitation spectrum thereof. 13.The light emitting diode module according to claim 8, wherein thephosphor is a quantum dot phosphor and comprises at least one compoundsemiconductor of In, Zn, S, Cd, Se, Pb, and combinations thereof. 14.The light emitting diode module according to claim 8, wherein the lightemitting diode module has a color gamut of 95% or more with reference toan NTSC (National Television System Committee).
 15. A light emittingdiode package comprising: a housing comprising a first cavity and asecond cavity; a first light emitting diode chip disposed in the firstcavity; a second light emitting diode chip disposed in the secondcavity; and a wavelength conversion part disposed in the first cavityand configured to convert wavelengths of light emitted from the firstlight emitting diode chip, wherein: light emitted from the first lightemitting diode chip has a shorter wavelength than light emitted from thesecond light emitting diode chip; light emitted from the second lightemitting diode chip is configured to be blocked from entering thewavelength conversion part; and the light emitting diode package isconfigured to emit white light by mixing light emitted from the firstlight emitting diode chip, the second light emitting diode chip, and thewavelength conversion part.
 16. The light emitting diode packageaccording to claim 15, wherein the wavelength conversion part furthercomprises: a first transparent resin comprising phosphors dispersedtherein; and the second cavity comprises a second transparent resin notcomprising phosphors.
 17. The light emitting diode package according toclaim 15, wherein the first light emitting diode chip is configured toemit blue light, the second light emitting diode chip is configured toemit green light, and the wavelength conversion part is configured toemit red light.
 18. The light emitting diode package according to claim15, wherein the wavelength conversion part comprises at least one ofnitride phosphors, sulfide phosphors, fluoride phosphors, quantum dotphosphors, and combinations thereof.
 19. The light emitting diodepackage according to claim 15, wherein the wavelength conversion partcomprises fluorine-based phosphors, and has a fluorescence intensity of5 or less at the peak wavelength of the light emitted from the secondlight emitting diode chip, with reference to a maximum fluorescenceintensity of 100 on an excitation spectrum thereof.
 20. The lightemitting diode package according to claim 15, wherein red light emittedfrom the wavelength conversion part exhibits at least three peaks at awavelength of 600 nm to 660 nm.